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IXSN35N120AU1 |
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| Part Number | IXSN35N120AU1 |
| Manufacturer | IXYS |
| Description | High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE(sat) 3 2 = 1200 V = 70 A = 4V 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md Weight Sym... |
| Features |
q
q
q q
q
q
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
q
International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 7... |
| Document |
 IXSN35N120AU1 Data Sheet
PDF 99.20KB |
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Desde 2024. D4U Semiconductor.
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