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SPB02N60S5 |
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| Part Number | SPB02N60S5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
| Features |
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
5 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
mi... |
| Document |
 SPB02N60S5 Data Sheet
PDF 337.77KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPB02N60S5 |
INCHANGE |
N-Channel MOSFET |
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| 2 | SPB02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
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| 3 | SPB02N60C3 |
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| 4 | SPB03N60C3 |
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| 5 | SPB03N60C3 |
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| 6 | SPB03N60S5 |
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Power Transistor |
|
Desde 2024. D4U Semiconductor.
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