STP4NA40 |
Part Number | STP4NA40 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value STP4NA40FI 400 400 ± 30 4 2.5 16 80 0.64 -65 to 150 150 2.8 1.7 16 40 0.32 2000
Unit
V V V A A A W W/o C V
o o
C C
( •) Pulse width limited by safe operating area November 1996 1/10 STP4NA40/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl The... |
Document |
STP4NA40 Data Sheet
PDF 198.86KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STP4NA40F1 |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP4NA40FI |
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N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
3 | STP4NA60 |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
4 | STP4NA60FI |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STP4NA60FP |
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N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STP4NA80 |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |