logo

SFH309P Siemens Semiconductor Group NPN-Silizium-Fototransistor Silicon NPN Phototransistor Datasheet

SFH309PFA3 Optoelectronic Device


Siemens Semiconductor Group
SFH309P
Part Number SFH309P
Manufacturer Siemens Semiconductor Group
Description Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ...
Features q Especially suitable for applications from Bereich von 380 nm bis 1180 nm (SFH 309 P) und bei 880 nm (SFH 309 PFA) q Hohe Linearität q 3 mm plane Plastikbauform im LED-Gehäuse q Gruppiert lieferbar Anwendungen q Lichtschranken für Gleich- und 380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA) q High linearity q 3 mm plane LED plastic package q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb q Industrieelektronik q “Messen/Steuern/Regeln” Typ (*vorher) Type (*formerly) SFH 309 P SFH 309 PFA (*SFH 309 ...

Document Datasheet SFH309P datasheet pdf (274.49KB)
Distributor Distributor
ComSIT Asia
Stock 7470 In Stock
Price
No price available
BuyNow (No Longer Stocked OSRAM GmbH)




SFH309P Distributor

OSRAM GmbH
SFH309PFA3
Optoelectronic Device
No price available
Distributor
ComSIT Asia

7470 In Stock
No Longer Stocked





Similar Datasheet

Part Number Description
SFH300
manufacturer
Siemens Semiconductor Group
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS VEC 35 50 100 7 V mA mA V S...
SFH3010
manufacturer
OSRAM
Silicon NPN Phototransistor
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 3010   SFH 3010 SMARTLED® Silicon NPN Phototransistor (not for new design in automotive applications) Applications ——Access Control (IRIS/Vein Scan, Face Recognition) ——Electronic Equipment ——Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Features: ——Package: Epoxy, diffuse ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm ——Large viewing angle ± 80° ——Available on tape and reel ——Spectral range of sensitivity: (typ) 420 ... 1100 nm Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE SFH 3010-Z ≥ 25 µA Ordering Code Q65110A64...
SFH3015FA
manufacturer
OSRAM
Silicon PIN Photodiode
Emitter Collector 8 Version 1.6 | 2020-11-20  SFH 3015 FA   Recommended Solder Pad 6) Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD-020E 300 ˚C T 250 240 ˚C 217 ˚C tP 200 tL 150 tS 100 OHA04525 Tp 245 ˚C 50 25 ˚C 0 0 50 100 150 200 250 s 300 t 9 Version 1.6 | 2020-11-20  SFH 3015 FA   Profile Feature Symbol Ramp-up rate to preheat*) 25 °C to 150 °C Time tS tS TSmin to TSmax Ramp-up rate to peak*) TSmax to TP Liquidus temperature TL Time above liquidus temperature tL Peak temperature TP Time within 5 °C of the specified peak tP temperature TP - 5 K Ramp-down rate* TP to 100 °C Time 25 °C to TP Pb-Free (SnAgCu...
SFH302
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ... + 80...
SFH303
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS VEB 50 50 100 7 V mA ...
SFH305
manufacturer
Siemens Semiconductor Group
Mini-Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ... + 80 230 Einheit Unit °C °C Top; Tstg TS TS ...
SFH309
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS 35 15 75 V mA mA Semiconductor Group 2 SFH 309 SFH 309 FA Gr...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy