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NE5520279A-T1 |
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| Part Number | NE5520279A-T1 |
| Manufacturer | NEC |
| Description | NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS tec... |
| Features |
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX. • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V A 0.4±0.15 5.7 MAX. 0.2±0.1 0.8±0.15 1.0 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain 0.8 MAX. 3.6±0.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wirele... |
| Document |
 NE5520279A-T1 Data Sheet
PDF 166.32KB |
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