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NE24200 |
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| Part Number | NE24200 |
| Manufacturer | NEC |
| Description | NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associ... |
| Features |
• Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.25 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE APPLICATIONS Commercial Industrial, space ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW ˚ C ˚ C * Chip mounted on a Alumina heatsink (size:... |
| Document |
 NE24200 Data Sheet
PDF 85.88KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE24283B |
California Eastern |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
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| 2 | NE2001-VA20 |
Rohm |
Near edge thermal printhead (8 dots / mm) |
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| 3 | NE2001-VA20A |
Rohm |
Near edge thermal printhead (8 dots / mm) |
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| 4 | NE2002-VA10A |
Rohm |
Near edge thermal printhead (8 dots / mm) |
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| 5 | NE2004-VA10A |
Rohm |
Near edge thin film thermal printhead (8 dots / mm) |
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| 6 | NE202 |
NEC |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
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Desde 2024. D4U Semiconductor.
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