NDP708AE |
Part Number | NDP708AE |
Manufacturer | Fairchild |
Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
Features |
60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drai... |
Document |
NDP708AE Data Sheet
PDF 74.91KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDP708A |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | NDP708B |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | NDP708BE |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | NDP7050 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | NDP7050L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | NDP7051 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |