NDP7051 |
Part Number | NDP7051 |
Manufacturer | Fairchild |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
Features |
70A, 50V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage
T C = 25°C unless otherwise ... |
Document |
NDP7051 Data Sheet
PDF 360.12KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDP7050 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | NDP7050L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | NDP7051L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | NDP7052 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | NDP7052L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | NDP7060 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |