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NDP6060L |
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| Part Number | NDP6060L |
| Manufacturer | Fairchild |
| Description | These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been espe... |
| Features |
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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| Document |
 NDP6060L Data Sheet
PDF 360.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDP6060 |
Fairchild |
N-Channel FET |
|
| 2 | NDP6060 |
ON Semiconductor |
N-Channel FET |
|
| 3 | NDP6060L |
ON Semiconductor |
N-Channel FET |
|
| 4 | NDP606A |
National |
N-Channel Enhancement Mode Power Fleid Effect Transistor |
|
| 5 | NDP606B |
National |
N-Channel Enhancement Mode Power Fleid Effect Transistor |
|
| 6 | NDP6020 |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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