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NDP508BE |
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| Part Number | NDP508BE |
| Manufacturer | Fairchild |
| Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
| Features |
19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltag... |
| Document |
 NDP508BE Data Sheet
PDF 73.44KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDP508B |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 2 | NDP508A |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | NDP508AE |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | NDP505A |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
| 5 | NDP505B |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET |
|
| 6 | NDP5060 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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