NDP5060L |
Part Number | NDP5060L |
Manufacturer | Fairchild |
Description | These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been espe... |
Features |
26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 5 V RDS(ON) = 0.035 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Volta... |
Document |
NDP5060L Data Sheet
PDF 358.96KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDP5060 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | NDP506A |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET | |
3 | NDP506B |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET | |
4 | NDP505A |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET | |
5 | NDP505B |
National Semiconductor |
(NDP505 / NDP5060 N-Channel Enhancement Mode Power FET | |
6 | NDP508A |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |