NDP408 |
Part Number | NDP408 |
Manufacturer | Fairchild |
Description | These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo... |
Features |
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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G
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Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-... |
Document |
NDP408 Data Sheet
PDF 73.06KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NDP4050 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | NDP4050L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
3 | NDP4060 |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | NDP4060L |
Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | NDP408A |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | NDP408AE |
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |