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MZ0912B50Y |
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| Part Number | MZ0912B50Y |
| Manufacturer | Philips |
| Description | NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. h... |
| Features |
• Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A meta... |
| Document |
 MZ0912B50Y Data Sheet
PDF 90.73KB |
Similar Datasheet
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