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NTE5519 |
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| Part Number | NTE5519 |
| Manufacturer | NTE |
| Description | NTE5517 thru NTE5519 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5517.. . . . . ... |
| Features |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On –State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non –Repetitive) On –State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 350A Peak Gate –Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak Gate –Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate –Power Dissipation, PG(AV) . . . . . . ... |
| Document |
 NTE5519 Data Sheet
PDF 18.34KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NTE5511 |
NTE |
Silicon Controlled Rectifier |
|
| 2 | NTE5513 |
NTE |
Silicon Controlled Rectifier |
|
| 3 | NTE5514 |
NTE |
Silicon Controlled Rectifier |
|
| 4 | NTE5516 |
NTE |
Silicon Controlled Rectifier |
|
| 5 | NTE5517 |
NTE |
Silicon Controlled Rectifier |
|
| 6 | NTE55 |
NTE |
Silicon Complementary Transistors |
|
Desde 2024. D4U Semiconductor.
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