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NTE10 |
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| Part Number | NTE10 |
| Manufacturer | NTE |
| Description | NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5G... |
| Features |
D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector –Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector –Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Emitter –Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... |
| Document |
 NTE10 Data Sheet
PDF 20.68KB |
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Desde 2024. D4U Semiconductor.
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