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MMBD6100LT1 |
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| Part Number | MMBD6100LT1 |
| Manufacturer | ON |
| Description | MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Symbol VR IF IFM(surge) Reverse Voltage Forward Current Peak Forward Surge Current Rating Value 70 200 500 U... |
| Features |
Publication Order Number: MMBD6100LT1/D
MMBD6100LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.8 trr C — — 0.7 1.1 4.0 2.5 ns pF 70 — — 0.1 Vdc µAdc Vdc
820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR I... |
| Document |
 MMBD6100LT1 Data Sheet
PDF 81.12KB |
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Desde 2024. D4U Semiconductor.
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