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NE856 |
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| Part Number | NE856 |
| Manufacturer | NEC |
| Description | NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic... |
| Features |
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST E B 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride ... |
| Document |
 NE856 Data Sheet
PDF 1.07MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | NE85001 |
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1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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| 2 | NE8500100 |
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1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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| 3 | NE8500199 |
NEC |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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| 4 | NE85002 |
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2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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| 5 | NE8500200 |
NEC |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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| 6 | NE8500295-4 |
NEC |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
|
Desde 2024. D4U Semiconductor.
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