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MJE8503 |
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| Part Number | MJE8503 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A/D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Series NPN Bipolar Power Transistor The MJE8503A trans... |
| Features |
Peak (1) Collector Current — Continuous Collector Current — Peak Total Power Dissipation @ TC = 25°C @ TC = 100°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VCBO VEBO IC IB IBM PD Value 700 1500 1500 5.0 5.0 10 4.0 4.0 80 21 0.8 – 65 to +125 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 sec. (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%. Symbol RθJC TL Max 1.25 275 Unit °C/W °C SWITCHMODE is a tra... |
| Document |
 MJE8503 Data Sheet
PDF 89.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE8500 |
INCHANGE |
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| 2 | MJE8501 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 3 | MJE8502 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 4 | MJE8503 |
Inchange Semiconductor |
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|
| 5 | MJE8503 |
INCHANGE |
NPN Transistor |
|
| 6 | MJE8503A |
Motorola |
POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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