MJE18604D2 |
Part Number | MJE18604D2 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18604D2/D MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode ... |
Features |
• Low Base Drive Requirement • High DC Current Gain (30 Typical) @ IC = 400 mA • Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread • Integrated Collector –Emitter Free Wheeling Diode Matched with the Power Transistor • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ... |
Document |
MJE18604D2 Data Sheet
PDF 217.25KB |
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