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M368L6423ETN-AA |
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| Part Number | M368L6423ETN-AA |
| Manufacturer | Samsung |
| Description | Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS8 CK0,CK0 ~ CK2, CK2 CKE0, CKE1(for double banks) CS0, CS1(for double banks) RAS CAS WE CB0 ~ CB7 (for x72 module) Function Address input (Multiplexed)... |
| Features |
2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (clock) • Programmable Burst length (2, 4, 8) • Programmable Burst type (sequential & interleave) • Edge aligned data output, center aligned data input • Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh) • Serial presence detect with E... |
| Document |
 M368L6423ETN-AA Data Sheet
PDF 377.68KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | M368L6423ETN-A2 |
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| 2 | M368L6423ETN-B0 |
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| 3 | M368L6423ETN-CB3 |
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| 4 | M368L6423ETN-CLB3 |
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| 5 | M368L6423FTN |
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184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
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| 6 | M368L6423FTN-CB3B0 |
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Desde 2024. D4U Semiconductor.
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