MCR08BT1 |
Part Number | MCR08BT1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR08BT1/D SOTĆ223 SCR Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors PNPN devices designed for line powered consumer... |
Features |
rcuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, Forward, TA = 25°C Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM, VRRM 200 400 600 0.8 10 0.4 0.1 0.01 –40 to +110 –40 to +150 260 Amps Amps A2s Watts Watts °C °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent t... |
Document |
MCR08BT1 Data Sheet
PDF 294.01KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MCR08BT1 |
NXP |
SCR | |
2 | MCR08B |
Littelfuse |
Thyristors | |
3 | MCR08B |
ON |
Sensitive Gate Silicon Controlled Rectifiers | |
4 | MCR08 |
UTC |
SENSITIVE GATE SILICON CONTROLLED RECTIFIER | |
5 | MCR08M |
Littelfuse |
Thyristors | |
6 | MCR08M |
ON Semiconductor |
Sensitive Gate Silicon Controlled Rectifiers |