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IRFU410A |
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| Part Number | IRFU410A |
| Manufacturer | Fairchild |
| Description | Advanced Power MOSFET IRFU410A IRFU410A BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A TO-220 Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacit... |
| Features |
e
Symbol RθJC Rθ CS Rθ JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -1.7 -Max. 3.0 -110
Ο
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFU410A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-St... |
| Document |
 IRFU410A Data Sheet
PDF 190.25KB |
Similar Datasheet
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