MG25Q6ES42 |
Part Number | MG25Q6ES42 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed:... |
Features |
• 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) • The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque SYMBOL RATING VCES VGES IC ICP IF IFM 1200 ± 20 25 50 25 50 PC 200 Tj Tstg VIsol — 150 -40 ~ 125 2500 (AC 1 Minute) 3 UNIT ... |
Document |
MG25Q6ES42 Data Sheet
PDF 595.24KB |
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