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MG25Q1BS11 |
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| Part Number | MG25Q1BS11 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. E... |
| Features |
V, VCE = 0 VCE = 1200V, VGE = 0 IC = 25mA, VCE = 5V
VCE (sat) IC = 25A, VGE = 15V
Cies tr ton tf toff
Rth (j-c)
VCE = 10V, VGE = 0, f=1MHz ―
MG25Q1BS11
Min Typ. Max Unit
― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V
― 2.2 2.7 V
― 3000 ―
pF
― 0.3 0.6
― 0.4 0.8 µs
― 0.6 1.0
― 1.2 1.8
― ― 0.5 °C / W
2 2003-04-11
MG25Q1BS11
3 2003-04-11
MG25Q1BS11
4 2003-04-11
MG25Q1BS11
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent e... |
| Document |
 MG25Q1BS11 Data Sheet
PDF 176.30KB |
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Desde 2024. D4U Semiconductor.
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