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MG200Q1ZS40 |
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| Part Number | MG200Q1ZS40 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr =... |
| Features |
f voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off Time
Reverse current
Forward voltage
Reverse recovery time
Thermal resistance
Transistor Diode
Symbol
IGES ICES VGE (off) VCE (sat) Cies
tr ton tf toff IR VF
trr
Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 VCE = 5V, IC = 200mA IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
VR = 1200V IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs
Rth (j-c)
MG200Q1ZS40
Min Typ. Max Unit
― ― ±20 ― ― 2.0 3.0 ― 6.0 ― 3.0 4.0 ― 24000 ― ― 0.3 0.6 ― 0.... |
| Document |
 MG200Q1ZS40 Data Sheet
PDF 203.06KB |
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Desde 2024. D4U Semiconductor.
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