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MG200Q1ZS11 |
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| Part Number | MG200Q1ZS11 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max.) trr = 0.... |
| Features |
Collector-emitter voltage
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
IGES ICES VCES VGE (OFF) VCE (sat) Cies
tr ton tf toff VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC ≤ 4mA ,VCE = 0
(Note 1)
IC = 200mA ,VCE = 5V
IC = 200A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
― ― 1200 3.0 ― ― ―
―
―
―
IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs
― ―
Transistor
―
Diode
―
― ― ― ― 2.2 31000 0.... |
| Document |
 MG200Q1ZS11 Data Sheet
PDF 410.76KB |
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Desde 2024. D4U Semiconductor.
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