Busque con el número de pieza junto con el fabricante o la descripción
MG200Q1JS40 |
Click to view a larger image
| Part Number | MG200Q1JS40 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 MG200Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs... |
| Features |
ge Collector-emitter saturation voltage
Input capacitance
Switching time
Reverse current Forward voltage
Rise time Turn-on time Fall time Turn-off time
Reverse recovery time
Thermal resistance
Transistor Diode
Symbol
Test Condition
IGES ICES VGE (OFF) VCE (sat)
Cies
tr ton tf toff IR VF
trr
VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 VCE = 5V, IC = 200mA IC = 200A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz
VR = 1200V IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs
Rth (j-c)
MG200Q1JS40
Min Typ. Max Unit
― ― ±20 µA ― ― 2.0 mA 3.0 ― 6.0 V ― 3.0 4.0 V
― 24000 ―
pF
― 0.3 0.6... |
| Document |
 MG200Q1JS40 Data Sheet
PDF 202.03KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MG200Q1UK1 |
ETC |
NPN |
|
| 2 | MG200Q1UK1 |
ETC |
TRANSISTOR MODULES |
|
| 3 | MG200Q1US41 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 4 | MG200Q1US51 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 5 | MG200Q1ZS11 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 6 | MG200Q1ZS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
Desde 2024. D4U Semiconductor.
|