MG150Q2YS40 |
Part Number | MG150Q2YS40 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS40 MG150Q2YS40 High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr =... |
Features |
ff current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
IGES ICES VGE (off) VCE (sat) Cies
tr ton tf toff VF
trr
Rth (j-c)
Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 150mA , VCE = 5V IC = 150A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
IF = 150A, VGE = 0 IF = 150A, VGE = −10V di / dt = 200A / µs Transistor Diode
MG150Q2YS40
Min Typ. Max Unit
― ― ±20 ― ― 2.0 3.0 ― 6.0 ― 3.0 4.0 ― 18000 ― ― 0.3 0.6 ― 0.4... |
Document |
MG150Q2YS40 Data Sheet
PDF 195.25KB |
Similar Datasheet
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