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MEM4X16E43VTW-5 |
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| Part Number | MEM4X16E43VTW-5 |
| Manufacturer | ETC |
| Description | The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 loca... |
| Features |
• Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible • Extended Data-Out (EDO) PAGE MODE access • 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms • Self refresh for low-power data retention 4X16E43V PIN ASSIGNMENT (Top View) 50-Pin TSOP VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC VCC WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 VCC †A12 OPTIONS • Plastic Package 50-pin TSOP ... |
| Document |
 MEM4X16E43VTW-5 Data Sheet
PDF 598.34KB |
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Desde 2024. D4U Semiconductor.
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