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PHX5N40E |
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| Part Number | PHX5N40E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling p... |
| Features |
urce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. -55 MAX. 400 400 30 4.9 3.0 19.6 4.9 19.6 30 150 150 UNIT V V V A A A A A W ˚C ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 10 A; VDD ≤ 50 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge ... |
| Document |
 PHX5N40E Data Sheet
PDF 24.89KB |
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