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PHP6N10E |
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| Part Number | PHP6N10E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance ... |
| Features |
voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 6.3 4.5 25 50 0.33 ± 30 30 6.3 175 UNIT A A A W W/K V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 3 UNIT K/W K/W
March 1997
1
Rev 1.0... |
| Document |
 PHP6N10E Data Sheet
PDF 53.42KB |
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