Busque con el número de pieza junto con el fabricante o la descripción
PHD6N10E |
Click to view a larger image
| Part Number | PHD6N10E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hig... |
| Features |
ear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 6.3 4.5 25 50 0.33 ± 30 30 6.3 175 UNIT A A A W W/K V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum... |
| Document |
 PHD6N10E Data Sheet
PDF 70.04KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHD63NQ03LT |
NXP |
logic level FET |
|
| 2 | PHD66NQ03LT |
NXP |
N-channel TrenchMOS logic level FET |
|
| 3 | PHD69N03LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
| 4 | PHD101NQ03LT |
NXP |
N-Channel MOSFET |
|
| 5 | PHD108NQ03LT |
NXP |
N-Channel MOSFET |
|
| 6 | PHD10N10E |
NXP |
Transistor |
|
Desde 2024. D4U Semiconductor.
|