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PHD3N20L |
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| Part Number | PHD3N20L |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switc... |
| Features |
n current Total dissipation Linear derating factor Gate-source voltage Non-repetitive gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C tp ≤ 50 µs VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 5 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 5 V MIN. - 55 MAX. 3.5 2.5 14 50 0.33 ± 15 ± 20 25 3.5 175 UNIT A A A W W/K V V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mountin... |
| Document |
 PHD3N20L Data Sheet
PDF 56.86KB |
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Desde 2024. D4U Semiconductor.
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