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PHD11N06LT |
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| Part Number | PHD11N06LT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc ... |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is... |
| Document |
 PHD11N06LT Data Sheet
PDF 76.41KB |
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