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PHB65N06LT |
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| Part Number | PHB65N06LT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB65N06LT
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 63 150 175 18 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maxi... |
| Document |
 PHB65N06LT Data Sheet
PDF 69.59KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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