Busque con el número de pieza junto con el fabricante o la descripción
PHB2N50 |
Click to view a larger image
| Part Number | PHB2N50 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switchin... |
| Features |
ar derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 2 1.3 8 50 0.4 ± 30 100 2 150 UNIT A A A W W/K V mJ A ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum footp... |
| Document |
 PHB2N50 Data Sheet
PDF 59.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PHB2N50E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 2 | PHB2N60E |
NXP |
PowerMOS transistors Avalanche energy rated |
|
| 3 | PHB20N06T |
NXP |
N-channel TrenchMOS standard level FET |
|
| 4 | PHB20N06T |
nexperia |
N-channel MOSFET |
|
| 5 | PHB20NQ20T |
NXP |
N-channel TrenchMOS standard level FET |
|
| 6 | PHB21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET |
|
Desde 2024. D4U Semiconductor.
|