PHB20NQ20T |
Part Number | PHB20NQ20T |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
Features |
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC converters
General purpose switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
VGS = 10... |
Document |
PHB20NQ20T Data Sheet
PDF 175.71KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PHB20N06T |
NXP |
N-channel TrenchMOS standard level FET | |
2 | PHB20N06T |
nexperia |
N-channel MOSFET | |
3 | PHB21N06LT |
NXP |
N-channel TrenchMOS transistor Logic level FET | |
4 | PHB21N06T |
NXP |
TrenchMOS transistor Standard level FET | |
5 | PHB222NQ04LT |
NXP Semiconductors |
N-channel TrenchMOSTM logic level FET | |
6 | PHB225NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |