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MBR3100 |
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| Part Number | MBR3100 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide pass... |
| Features |
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature High Surge Capacity Pb−Free Packages are Available* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) ... |
| Document |
 MBR3100 Data Sheet
PDF 161.36KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MBR3100 |
UTC |
3.0A SCHOTTKY BARRIER RECTIFIER |
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| 2 | MBR3100 |
Digitron Semiconductors |
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| 3 | MBR3100 |
Kexin |
Schottky Barrier Rectifier |
|
| 4 | MBR3100 |
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|
| 5 | MBR3100 |
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AXIAL LEADED SCHOTTKY BARRIER RECTIFIER |
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| 6 | MBR3100 |
Diodes |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
|
Desde 2024. D4U Semiconductor.
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