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MTW8N60E |
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| Part Number | MTW8N60E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| Features |
ource –to –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –... |
| Document |
 MTW8N60E Data Sheet
PDF 70.77KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTW8N60E |
ON Semiconductor |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
|
| 2 | MTW8N50E |
Motorola |
TMOS POWER FET |
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| 3 | MTW10N100E |
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TMOS POWER FET |
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| 4 | MTW10N100E |
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Power MOSFET |
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| 5 | MTW10N40E |
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TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
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| 6 | MTW14N50E |
Motorola |
TMOS POWER FET |
|
Desde 2024. D4U Semiconductor.
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