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LPV3000 |
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| Part Number | LPV3000 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0... |
| Features |
DRAIN PAD (x4)
LP3000/LPV3000
2W Power PHEMT
• • • • • +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE THICKNESS: 2.6 mils (65 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-wr... |
| Document |
 LPV3000 Data Sheet
PDF 49.75KB |
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Desde 2024. D4U Semiconductor.
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