LC421 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Datasheet. existencias, precio

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LC421

Polyfet RF Devices
LC421
LC421 LC421
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Part Number LC421
Manufacturer Polyfet RF Devices
Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an...
Features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.30 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 7.0 A RF CHARACTERISTICS ( SYMBOL ...

Document Datasheet LC421 Data Sheet
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