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LC35V256EM |
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| Part Number | LC35V256EM |
| Manufacturer | Sanyo |
| Description | Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs w... |
| Features |
• Supply voltage range: 3.0 to 3.6 V • Access time: 70 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) • Operating temperature: –10 to +70°C • Data retention voltage: 2.0 to 3.6 V • All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC) • Input/output shared function pins, 3-state output pins • No clock required (fully static circuits) • Package 28-pin SOP (450 mil) plastic package: LC35V256EM-70W 28-pin TSOP (8 × 13.4 mm) plastic package: LC35V256ET-70W 0.4 1.27 0.1 2.3 SANYO: SOP28D unit: mm 3221-TSOP28 (Type I) [LC35V256ET-70W] 21 8 11.8 1.27max 22 28 1 0.55 8.1 7 ... |
| Document |
 LC35V256EM Data Sheet
PDF 46.87KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LC35V256EM-70W |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
|
| 2 | LC35V256ET-70W |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
|
| 3 | LC35V1000BM |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
|
| 4 | LC35V1000BTS-70U |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
|
| 5 | LC3514 |
Sanyo |
1024 x 4-Bit High Speed CMOS Static RAM |
|
| 6 | LC3514A |
Sanyo |
1024 x 4-Bit High Speed CMOS Static RAM |
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Desde 2024. D4U Semiconductor.
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