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K4M563233D |
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| Part Number | K4M563233D |
| Manufacturer | Samsung |
| Description | The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design al... |
| Features |
• 3.0V & 3.3V power supply • LVCMOS compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle). • Extended Temperature Operation (-25 °C ~ 85° C). • Inderstrial Temperature Operation (-40 °C ~ 85 ° C). • 90Balls DDP FBGA(-MXXX -Pb, -EXXX -Pb Free). CMOS SDRAM GENERAL ... |
| Document |
 K4M563233D Data Sheet
PDF 65.02KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M563233E |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 2 | K4M563233G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 3 | K4M56323LE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 4 | K4M56323PG-C |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 5 | K4M56323PG-F |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 6 | K4M56323PG-FE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
Desde 2024. D4U Semiconductor.
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