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K4M51323LE-M |
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| Part Number | K4M51323LE-M |
| Manufacturer | Samsung |
| Description | The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Te... |
| Document |
 K4M51323LE-M Data Sheet
PDF 141.21KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M51323LE-F1L |
Samsung |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 2 | K4M51323LE-L |
Samsung |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 3 | K4M51323LE-MC |
Samsung |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 4 | K4M51323LC-F |
Samsung semiconductor |
Mobile-SDRAM |
|
| 5 | K4M51323LC-G |
Samsung semiconductor |
Mobile-SDRAM |
|
| 6 | K4M51323LC-L |
Samsung semiconductor |
Mobile-SDRAM |
|
Desde 2024. D4U Semiconductor.
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