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K4J55323QF-GC |
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| Part Number | K4J55323QF-GC |
| Manufacturer | Samsung |
| Description | FOR 2M x 32Bit x 4 Bank GDDR3 SDRAM The 8Mx32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performan... |
| Features |
• 2.0V + 0.1V power supply for device operation • 2.0V + 0.1V power supply for I/O interface • On-Die Termination (ODT) • Output Driver Strength adjustment by EMRS • Calibrated output drive • Pseudo Open drain compatible inputs/outputs • 4 internal banks for concurrent operation • Differential clock inputs (CK and CK) • Commands entered on each positive CK edge • CAS latency : 5, 6, 7, 8 and 9 (clock) • Additive latency (AL): 0 and 1 (clock) • Programmable Burst length : 4 • Programmable Write latency : 1, 2, 3, 4, 5 and 6 (clock) • Single ended READ strobe (RDQS) per byte • Single ended WRITE... |
| Document |
 K4J55323QF-GC Data Sheet
PDF 1.00MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4J55323QF-GC14 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 2 | K4J55323QF-GC15 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 3 | K4J55323QF-GC16 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 4 | K4J55323QF-GC20 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 5 | K4J52324QE |
Samsung |
512Mbit GDDR3 SDRAM |
|
| 6 | K4003 |
Toshiba Semiconductor |
2SK4003 |
|
Desde 2024. D4U Semiconductor.
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