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IRG4PH40UD |
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| Part Number | IRG4PH40UD |
| Manufacturer | International Rectifier |
| Description | PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in r... |
| Features |
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimi... |
| Document |
 IRG4PH40UD Data Sheet
PDF 336.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PH40U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PH40UD2 |
IRF |
Insulated Gate Bipolar Transistor |
|
| 3 | IRG4PH40UD2-E |
IRF |
Insulated Gate Bipolar Transistor |
|
| 4 | IRG4PH40UD2-EP |
IRF |
Insulated Gate Bipolar Transistor |
|
| 5 | IRG4PH40UD2PBF |
IRF |
Insulated Gate Bipolar Transistor |
|
| 6 | IRG4PH40UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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