APT8075BN |
Part Number | APT8075BN |
Manufacturer | Advanced Power Technology |
Description | D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MO... |
Features |
, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
12 0.75
Ohms
RDS(ON)
0.90 250 1000 ±100 2 4
µA nA Volts
IDSS IGSS V GS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 1.0mA)
THERMAL CHARACTERISTICS
Symbol RθJC R θJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
050-8007 Rev C
0.40 40
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columb... |
Document |
APT8075BN Data Sheet
PDF 49.97KB |
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