APT6035BVR |
Part Number | APT6035BVR |
Manufacturer | Advanced Power Technology |
Description | APT6035BVR 600V 18A 0.350Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing de... |
Features |
epetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 18 0.350 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5526 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)... |
Document |
APT6035BVR Data Sheet
PDF 62.43KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | APT6035BVR |
INCHANGE |
N-Channel MOSFET | |
2 | APT6035BN |
Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
3 | APT6035AVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
4 | APT6035SVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
5 | APT6030BN |
Advanced Power Technology |
N-Channel MOSFET | |
6 | APT6030BVFR |
INCHANGE |
N-Channel MOSFET |