APT6035BN Advanced Power Technology N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

APT6035BN

Advanced Power Technology
APT6035BN
APT6035BN APT6035BN
zoom Click to view a larger image
Part Number APT6035BN
Manufacturer Advanced Power Technology
Description D TO-247 G S APT6035BN 600V 19.0A 0.35Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage C...
Features GS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 4 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.40 40 USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-6107 Rev B CAUTION: These Devices are Sensitive to Electrostati...

Document Datasheet APT6035BN Data Sheet
PDF 49.58KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 APT6035BVR
INCHANGE
N-Channel MOSFET Datasheet
2 APT6035BVR
Advanced Power Technology
Power MOSFET Datasheet
3 APT6035AVR
Advanced Power Technology
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Datasheet
4 APT6035SVR
Advanced Power Technology
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Datasheet
5 APT6030BN
Advanced Power Technology
N-Channel MOSFET Datasheet
6 APT6030BVFR
INCHANGE
N-Channel MOSFET Datasheet
More datasheet from Advanced Power Technology
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad