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APT6020LVR |
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| Part Number | APT6020LVR |
| Manufacturer | Advanced Power Technology |
| Description | APT6020LVR 600V 30A 0.200Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing de... |
| Features |
Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 30 0.200 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5628 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C... |
| Document |
 APT6020LVR Data Sheet
PDF 63.99KB |
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Desde 2024. D4U Semiconductor.
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